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(R)
MMBT3906
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
Type MMBT3906
s
Marking 36
s
s s
SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS MMBT3904 SOT-23
APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT s SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T C = 25 C Storage Temperature Max. Operating Junction Temperature
o
Value -60 -40 -6 -200 350 -65 to 150 150
Unit V V V mA mW
o o
C C
June 2002
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MMBT3906
THERMAL DATA
R thj-amb * Thermal Resistance Junction-Ambient
2
Max
357.1
o
C/W
* Device mounted on a PCB area of 1 cm
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEX I BEX Parameter Collector Cut-off Current (V BE = 3 V) Collector Cut-off Current (V BE = 3 V) Test Conditions V CE = -30 V V CE = -30 V I C = -1 mA -40 Min. Typ. Max. -50 -50 Unit nA nA V
V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain
I C = -10 A
-60
V
V (BR)EBO
I E = -10 A
-6
V
V CE(sat) V BE(sat) h FE
I C = -10 mA I C = -50 mA I C = -10 mA I C = -50 mA IC IC IC IC IC = = = = = -0.1 mA -1 mA -10 mA -50 mA -100 mA
I B = -1 mA I B = -5 mA I B = -1 mA I B = -5 mA V CE = V CE = V CE = V CE = V CE = -1 -1 -1 -1 -1 V V V V V -0.65 60 80 100 60 30 250 4 6 25
-0.25 -0.4 -0.85 -0.95
V V V V
300
fT NF C CBO C EBO td tr ts
Transition Frequency Noise Figure Collector-Base Capacitance Emitter-Base Capacitance Delay Time Rise Time Storage Time
I C = -10mA V CE = -20 V f = 100MHz V CE = -5 V I C = -0.1 mA f = 10 Hz to 15.7 KHz R G = 1 K IE = 0 IC = 0 V CB = -5 V VEB = -0.5 V f = 100 KHz f = 100 KHz
MHz dB pF pF 35 35 ns ns ns ns
I C = -10 mA V CC = -3V I C = -10 mA V CC = -3V
I B = -1 mA
I B1 = -I B2 = -1 mA
225 72
Fall Time tf Pulsed: Pulse duration = 300 s, duty cycle 2 %
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MMBT3906
SOT-23 MECHANICAL DATA
mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7
DIM.
0044616/B
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MMBT3906
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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